Invention Grant
- Patent Title: Semiconductor device and a method for fabricating the same
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Application No.: US16049589Application Date: 2018-07-30
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Publication No.: US10714586B2Publication Date: 2020-07-14
- Inventor: Chia-Ming Hsu , Pei-Yu Chou , Chih-Pin Tsao , Kuang-Yuan Hsu , Jyh-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/45 ; H01L23/485 ; H01L29/66 ; H01L29/417 ; H01L23/532 ; H01L21/3205 ; H01L21/8234 ; H01L27/088 ; H01L21/285 ; H01L29/78 ; H01L21/02
Abstract:
A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
Public/Granted literature
- US20180337244A1 SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME Public/Granted day:2018-11-22
Information query
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