Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16136287Application Date: 2018-09-20
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Publication No.: US10714603B2Publication Date: 2020-07-14
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6c67efd4
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L21/266 ; H01L27/06 ; H01L29/41 ; H01L29/12 ; H01L29/40 ; H01L29/49 ; H01L27/07
Abstract:
A semiconductor device is provided that includes: an edge termination portion provided in the peripheral portion of a semiconductor substrate; and an active portion surrounded by the edge termination portion, wherein the active portion includes: a plurality of gate trench portions arrayed along a predetermined array direction; a plurality of dummy trench portions provided between a gate trench portion closest to the edge termination portion among the plurality of gate trench portions and the edge termination portion; mesa regions located between each of the plurality of dummy trench portions; and accumulation regions with a first conductivity-type provided in at least a part of the mesa regions.
Public/Granted literature
- US20190019885A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-17
Information query
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