Invention Grant
- Patent Title: Finfet with various shaped source/drain regions
-
Application No.: US16129935Application Date: 2018-09-13
-
Publication No.: US10714618B2Publication Date: 2020-07-14
- Inventor: Geum-jung Seong , Bo-ra Lim , Jeong-yun Lee , Ah-reum Ji
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@47181455
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L27/088 ; H01L21/768 ; H01L21/8238 ; H01L29/66 ; H01L27/092
Abstract:
A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.
Public/Granted literature
- US20190245076A1 SEMICONDUCTOR DEVICES HAVING SOURCE/DRAIN REGIONS Public/Granted day:2019-08-08
Information query
IPC分类:
