Invention Grant
- Patent Title: Trench process and structure for backside contact solar cells with polysilicon doped regions
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Application No.: US16506796Application Date: 2019-07-09
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Publication No.: US10714647B2Publication Date: 2020-07-14
- Inventor: David D. Smith
- Applicant: SunPower Corporation
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Okamoto & Benedicto LLP
- Main IPC: H01L31/068
- IPC: H01L31/068 ; H01L31/18 ; H01L31/0216 ; H01L31/0224 ; H01L31/0352 ; H01L31/0236 ; H01L31/0745 ; H01L31/0747 ; H01L31/028 ; H01L31/0368 ; H01L31/02

Abstract:
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
Public/Granted literature
- US20190378947A1 TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS Public/Granted day:2019-12-12
Information query
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