In order to provide a memory element configured to generate and detect monopole current, in an embodiment provided in the present disclosure is a monopole current generation detection device comprising a ferromagnetic quantum spin-ice layer, a buffer layer made of a material capable of exhibiting a quantum spin-liquid state, and a pair of electrodes disposed in contact with the buffer layer. In this device it is possible to apply a voltage between the pair of electrodes by providing a voltage application means. It is possible to generate a monopole current Jm upon application of the voltage, where the monopole currents through the ferromagnetic quantum spin-ice layer and through another ferromagnetic quantum spin-ice layer that is in contact with the buffer layer on the other side of the ferromagnetic quantum spin-ice layer. Also, the monopole current can be electrically detected by providing a detection circuit to the device. In embodiments of the present disclosure, further provided is a memory element in which a buffer layer is sandwiched by two ferromagnetic quantum spin-ice layers.