Invention Grant
- Patent Title: Ruthenium removal composition and method of producing magnetoresistive random access memory
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Application No.: US16245570Application Date: 2019-01-11
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Publication No.: US10714682B2Publication Date: 2020-07-14
- Inventor: Keeyoung Park , Atsushi Mizutani
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Solaris Intellectual Property Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3eb15921
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L21/3065 ; H01L21/308 ; H01L43/08 ; H01L27/105 ; C23F1/40 ; C23F4/00 ; C23F1/30
Abstract:
An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.
Public/Granted literature
- US20190148634A1 RUTHENIUM REMOVAL COMPOSITION AND METHOD OF PRODUCING MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2019-05-16
Information query
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