Invention Grant
- Patent Title: Solid-state image pickup element, image pickup device, and method of manufacturing solid-state image pickup element
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Application No.: US15778994Application Date: 2016-10-27
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Publication No.: US10715751B2Publication Date: 2020-07-14
- Inventor: Harumi Tanaka , Itaru Oshiyama , Sozo Yokogawa
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@8c127bc
- International Application: PCT/JP2016/081806 WO 20161027
- International Announcement: WO2017/098830 WO 20170615
- Main IPC: H04N5/341
- IPC: H04N5/341 ; G02B1/118 ; G02B5/20 ; G02B5/26 ; H01L31/10 ; H04N5/369 ; H01L27/146 ; H04N5/225 ; H04N5/232 ; H04N5/235 ; H04N5/33
Abstract:
The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel. In addition, a trench is further formed inside the pixel at a surface opposed to the light-receiving surface.
Public/Granted literature
Information query
