Invention Grant
- Patent Title: Silicon carbide microelectromechanical structure, device, and method
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Application No.: US16713177Application Date: 2019-12-13
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Publication No.: US10717642B2Publication Date: 2020-07-21
- Inventor: Francis J. Kub , Karl D. Hobart , Eugene A. Imhoff , Rachael L. Myers-Ward , Eugene Cook , Jonathan Bernstein , Marc Weinberg
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy , The Charles Stark Draper Company
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G01C19/5656 ; G01C19/5621 ; G01C19/56 ; B81C1/00 ; G01C19/5783 ; B81B7/00

Abstract:
Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.
Public/Granted literature
- US20200115219A1 Silicon Carbide Microelectromechanical Structure, Device, and Method Public/Granted day:2020-04-16
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