Invention Grant
- Patent Title: Target structure of physical vapor deposition
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Application No.: US15882899Application Date: 2018-01-29
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Publication No.: US10718048B2Publication Date: 2020-07-21
- Inventor: Ping-Yuan Chen , Hung-Cheng Chen , Chih-Hsua Hsieh , Yu-Hsuan Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/14 ; C23C14/06 ; C23C14/16 ; C23C14/35

Abstract:
A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
Public/Granted literature
- US20190003037A1 TARGET STRUCTURE OF PHYSICAL VAPOR DEPOSITION Public/Granted day:2019-01-03
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