An example method for chemical vapor deposition (CVD) of thin films includes providing a deposition zone in a reaction chamber having a fixed showerhead assembly that introduces CVD reactive gases under positive pressure into the deposition zone. The example method also includes moving a substrate carrier beneath the showerhead assembly in the reaction chamber, the substrate carrier supports and transports at least one substrate within the reaction chamber so as to be subjected to a CVD process by the CVD reactive gases. The example method also includes providing a liner assembly shrouding the deposition zone and including at least one partial enclosure around the deposition zone isolating the deposition zone and the substrate carrier, whereby solid reaction byproducts are plated onto material in the liner assembly and gaseous reaction byproducts flow radially outward, the liner assembly being mounted on the substrate carrier for motion with the substrate carrier.