Invention Grant
- Patent Title: Silicon-based molten composition and manufacturing method of SiC single crystal using the same
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Application No.: US15574216Application Date: 2016-10-25
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Publication No.: US10718065B2Publication Date: 2020-07-21
- Inventor: Chan Yeup Chung , Jung Min Ko , Dae Sung Kim , Sung Soo Lee , Chang Sun Eun
- Applicant: LG Chem, Ltd.
- Applicant Address: KR
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@650fd8d4
- International Application: PCT/KR2016/012020 WO 20161025
- International Announcement: WO2017/073984 WO 20170504
- Main IPC: C30B29/06
- IPC: C30B29/06 ; C30B29/36 ; H01L21/02 ; C30B9/10 ; C30B19/04 ; C30B9/06

Abstract:
Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than −0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A−B+μ1−μ2 Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, μ1 is a constant of −5.422, and μ2 is a constant of −9.097.
Public/Granted literature
- US20180127891A1 SILICON-BASED MOLTEN COMPOSITION AND MANUFACTURING METHOD OF SIC SINGLE CRYSTAL USING THE SAME Public/Granted day:2018-05-10
Information query
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