A substrate processing method including a center portion discharging step of discharging a low-surface-tension liquid from a first low-surface-tension liquid nozzle disposed above a substrate toward the center portion of an upper surface, an inert gas supplying step of supplying inert gas to above the substrate in parallel with the center portion discharging step in order to form a gas flow flowing along the upper surface, and a peripheral edge portion discharging and supplying step of discharging the low-surface-tension liquid from a second low-surface-tension liquid nozzle disposed above the substrate toward a peripheral edge portion of the upper surface in parallel with the center portion discharging step and the inert gas supplying step.