Invention Grant
- Patent Title: Method of manufacturing semiconductor apparatus and semiconductor apparatus
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Application No.: US16131957Application Date: 2018-09-14
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Publication No.: US10720329B2Publication Date: 2020-07-21
- Inventor: Shuhei Ichikawa
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya-shi
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya-shi
- Agency: Hunton Andrews Kurth LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@897a518
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/16 ; H01L29/47 ; H01L29/66 ; H01L29/872 ; H01L29/06
Abstract:
A method of manufacturing a semiconductor apparatus includes preparing a semiconductor substrate, and forming a Schottky electrode that is in Schottky contact with a surface of the semiconductor substrate. The Schottky electrode is made of a metal material containing a predetermined concentration of oxygen atoms.
Public/Granted literature
- US20190109005A1 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS Public/Granted day:2019-04-11
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