- Patent Title: Substrate support with thermal zones for semiconductor processing
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Application No.: US15183260Application Date: 2016-06-15
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Publication No.: US10720346B2Publication Date: 2020-07-21
- Inventor: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C14/54 ; C23C16/458 ; H01L21/683 ; H01L21/3065 ; H05B1/02 ; H05B3/26 ; H05B3/00 ; C23C14/50 ; C23C16/46 ; C23C16/509 ; H01J37/32 ; C23C4/134 ; C23C4/10 ; C23C14/10 ; C23C14/34 ; C23C16/40 ; H01L21/02 ; H01L21/285 ; H01L21/311 ; H01L21/3213
Abstract:
A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.
Public/Granted literature
- US20160300741A1 SUBSTRATE SUPPORT WITH THERMAL ZONES FOR SEMICONDUCTOR PROCESSING Public/Granted day:2016-10-13
Information query
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