Invention Grant
- Patent Title: Semiconductor die singulation and structures formed thereby
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Application No.: US15374885Application Date: 2016-12-09
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Publication No.: US10720360B2Publication Date: 2020-07-21
- Inventor: Fu-Chen Chang , Cheng-Lin Huang , Wen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/82 ; H01L23/00 ; H01L21/268 ; H01L21/56 ; H01L23/31 ; H01L23/544 ; H01L23/58 ; H01L25/065 ; H01L25/00

Abstract:
An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.
Public/Granted literature
- US20180033695A1 Semiconductor Die Singulation and Structures Formed Thereby Public/Granted day:2018-02-01
Information query
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