Invention Grant
- Patent Title: Semiconductor substrate
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Application No.: US15774358Application Date: 2017-02-03
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Publication No.: US10720374B2Publication Date: 2020-07-21
- Inventor: Tomohiro Shinagawa , Takeo Furuhata , Shingo Tomohisa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6b6a2451
- International Application: PCT/JP2017/003930 WO 20170203
- International Announcement: WO2017/135401 WO 20170810
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L23/373 ; C23C16/27 ; C30B25/18 ; C23C16/24 ; H01L21/02 ; C30B29/68 ; C30B29/40 ; C23C16/02 ; C23C16/50 ; C23C14/06 ; H01L29/16 ; H01L21/48
Abstract:
A semiconductor substrate according to the present invention includes a nitride semiconductor layer 203, an amorphous semiconductor layer 205 formed on one main surface side of the nitride semiconductor layer 203, a high-roughness layer 206 which is a semiconductor layer formed on the amorphous semiconductor layer 205 and has a surface roughness larger than the amorphous semiconductor layer 205, and a diamond layer 207 formed on the high-roughness layer 206. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.
Public/Granted literature
- US20190252288A1 SEMICONDUCTOR SUBSTRATE Public/Granted day:2019-08-15
Information query
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