Invention Grant
- Patent Title: Stacked semiconductor system having interposer of half-etched and molded sheet metal
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Application No.: US16688905Application Date: 2019-11-19
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Publication No.: US10720406B2Publication Date: 2020-07-21
- Inventor: Lee Han Meng@ Eugene Lee , Anis Fauzi bin Abdul Aziz , Khoo Yien Sien
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/00 ; H01L23/498 ; H01L23/495 ; H01L21/78 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor system (900) has a flat interposer (510) with a first surface (401a) in a first plane, a second surface (401b) in a parallel second plane, and a uniform first height (401) between the surfaces; the interposer is patterned in metallic zones separated by gaps (412, 415), the zones include metal of the first height and metal of a second height (402) smaller than the first height; an insulating material fills the gaps and the zone differences between the first and the second heights. Semiconductor chips of a first (610) and a second (611) set have first terminals attached to metallic zones of the first interposer surface while the chips of the second set have their second terminals facing away from the interposer. A first leadframe (700) is attached to the second terminals of the second set chips, and a second leadframe (800) is attached to respective metallic zones of the second interposer surface.
Public/Granted literature
- US20200091111A1 STACKED SEMICONDUCTOR SYSTEM HAVING INTERPOSER OF HALF-ETCHED AND MOLDED SHEET METAL Public/Granted day:2020-03-19
Information query
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