Invention Grant
- Patent Title: High surge transient voltage suppressor
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Application No.: US16240321Application Date: 2019-01-04
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Publication No.: US10720422B2Publication Date: 2020-07-21
- Inventor: Shekar Mallikarjunaswamy
- Applicant: Alpha and Omega Semiconductor (Cayman) Ltd.
- Applicant Address: KY Grand Cayman
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee Address: KY Grand Cayman
- Agency: Patent Law Works LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/74 ; H01L29/861

Abstract:
A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize avalanche mode breakdown to improve the breakdown voltage of the transistor. Alternately, a unidirectional transient voltage suppressor is constructed as an NPN bipolar transistor with a PN junction diode connected in parallel in the reverse bias direction to the protected node and incorporating individually optimized collector-base junction of the bipolar transistor and p-n junction of the diode.
Public/Granted literature
- US20190157257A1 HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR Public/Granted day:2019-05-23
Information query
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