Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15728797Application Date: 2017-10-10
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Publication No.: US10720433B2Publication Date: 2020-07-21
- Inventor: Shunpei Yamazaki , Keitaro Imai , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@28208c83
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C11/404 ; G11C11/405 ; G11C16/02 ; H01L21/8258 ; H01L27/06 ; H01L27/088 ; H01L27/105 ; H01L27/1156 ; H01L27/12 ; H01L29/786 ; H01L27/092

Abstract:
The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
Public/Granted literature
- US20180047730A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-15
Information query
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