The present disclosure relates to a detector device (300) assisted by majority current (104, 105), comprising a semiconductor layer of a first conductivity type (106), at least two control regions of the first conductivity type (100, 115), at least one detection region of a second conductivity type (101, 116) opposite to the first conductivity type and a source (110) for generating a majority carrier current (104) associated with an electrical field, wherein it further comprises isolation means (103) formed in the semiconductor layer and located between said two control regions, for deflecting the first majority carrier current generated by the first source between said two control regions and, hence, increasing the length of the first majority current path, reducing the amplitude of said first majority carrier current and, therefore, reducing the power consumption of the detector device.