Invention Grant
- Patent Title: Multilayered seed structure for magnetic memory element including a CoFeB seed layer
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Application No.: US16595120Application Date: 2019-10-07
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Publication No.: US10720469B2Publication Date: 2020-07-21
- Inventor: Zihui Wang , Yiming Huai
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Bing K. Yen
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/10 ; H01L43/02 ; H01L43/08 ; G11C11/16

Abstract:
The present invention is directed to a magnetic structure including a first seed layer, a second seed layer formed on top of the first seed layer, and a third seed layer made of chromium or iridium formed on top of the second seed layer. One of the first and second seed layers comprises cobalt, iron, and boron. The other one of the first and second seed layers is made of iridium, rhodium, cobalt, platinum, palladium, nickel, ruthenium, or rhenium. The magnetic structure further includes a magnetic fixed layer structure formed on top of the third seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The transition metal may be nickel, platinum, palladium, or iridium.
Public/Granted literature
- US20200043981A1 Multilayered Seed for Magnetic Structure Public/Granted day:2020-02-06
Information query
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