Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US14302739Application Date: 2014-06-12
-
Publication No.: US10720495B2Publication Date: 2020-07-21
- Inventor: Tsung-Yuan Yu , Hao-Yi Tsai , Chao-Wen Shih , Hung-Yi Kuo , Chia-Chun Miao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L29/06 ; H01L23/00 ; H01L21/304
Abstract:
A semiconductor device includes a substrate and a bump. The substrate includes a first surface and a second surface. A notch is at the second surface and at a sidewall of the substrate. A depth of the notch is smaller than about half the thickness of the substrate. The bump is disposed on the first surface of the substrate.
Public/Granted literature
- US20150364376A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-17
Information query
IPC分类:
