- Patent Title: Transistor device with a field electrode that includes two layers
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Application No.: US16270806Application Date: 2019-02-08
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Publication No.: US10720500B2Publication Date: 2020-07-21
- Inventor: Thomas Feil
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5a0891e6
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/40 ; H01L29/78 ; H01L29/739 ; H01L21/283 ; H01L29/43 ; H01L29/423
Abstract:
Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes first and second layers.
Public/Granted literature
- US20190172917A1 Transistor Device with a Field Electrode that Includes Two Layers Public/Granted day:2019-06-06
Information query
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