Described is an apparatus which comprises a transistor including: a layer of ferroelectric material; a layer of insulating material; and an oxide layer or a metal layer sandwiched between the layer of ferroelectric material and the layer of insulating material, wherein thickness of the ferroelectric material is less than thickness of the layer of insulating material; and a driver coupled to the transistor. Described is an apparatus which comprises: a transistor including: a first oxide layer of High-K material; a second oxide layer; and a layer of nanocrystals sandwiched between the first and second oxide layers, wherein thickness of first oxide layer is greater than thickness of the second oxide layer; and a driver coupled to the transistor.