Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16417681Application Date: 2019-05-21
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Publication No.: US10720519B2Publication Date: 2020-07-21
- Inventor: Tohru Shirakawa , Hidenori Takahashi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@34fd21e7
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/225 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L29/66
Abstract:
A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away from each other in the first direction, where the first-conductivity-type regions are shallower than the trench gates, one or more second-conductivity-type regions alternating with the first-conductivity-type regions in the first direction, where the second-conductivity-type regions are shallower than the trench gates and deeper than the first-conductivity-type regions, and a second-conductivity-type trench spacer region spaced away from the one or more trench gates, where the trench spacer region has a higher concentration than the second-conductivity-type regions. Here, the trench spacer region is positioned within the first-conductivity-type regions in plan view and closer to a back surface of the semiconductor device than the first-conductivity-type regions are.
Public/Granted literature
- US20190273156A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-09-05
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