Invention Grant
- Patent Title: Method and structure of stacked FinFET
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Application No.: US16057250Application Date: 2018-08-07
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Publication No.: US10720528B2Publication Date: 2020-07-21
- Inventor: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Alvin Borromeo, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/18 ; H01L29/161 ; H01L29/16 ; H01L21/283 ; H01L21/02 ; H01L29/66 ; H01L29/165
Abstract:
A semiconductor structure is provided that includes a fin stack structure of, from bottom to top, a first semiconductor material fin portion, an insulator fin portion and a second semiconductor material fin portion. The first semiconductor material fin portion can be used as a first device region in which a first conductivity-type device (e.g., n-FET or p-FET) can be formed, while the second semiconductor material fin portion can be used as a second device region in which a second conductivity-type device (e.g., n-FET or p-FET), which is opposite the first conductivity-type device, can be formed.
Public/Granted literature
- US20180350989A1 METHOD AND STRUCTURE OF STACKED FINFET Public/Granted day:2018-12-06
Information query
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