Invention Grant
- Patent Title: SiC wide trench-type junction barrier Schottky diode and manufacturing method therefor
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Application No.: US16797601Application Date: 2020-02-21
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Publication No.: US10720535B2Publication Date: 2020-07-21
- Inventor: Sin Su Kyoung , Tae Young Kang
- Applicant: PowerCubeSemi, INC.
- Applicant Address: KR Gyeonggi-do
- Assignee: PowerCubeSemi, INC.
- Current Assignee: PowerCubeSemi, INC.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@75200091
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L21/324 ; H01L21/308
Abstract:
Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N− epitaxial layer formed on a SiC N+-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N− epitaxial layer. The Schottky diode includes a P+ junction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N− epitaxial layer and a cathode electrode formed on the lower part of the SiC N+-type substrate. The width of the P+ junction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the P+ junction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.
Information query
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