A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.