Invention Grant
- Patent Title: Magnetic sensor using spin hall effect
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Application No.: US15826578Application Date: 2017-11-29
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Publication No.: US10720570B2Publication Date: 2020-07-21
- Inventor: Quang Le , David John Seagle , Xiaoyong Liu , Daniele Mauri , Yongchul Ahn , Hongquan Jiang , Guangli Liu , David Patrick Druist , Jui-Lung Li
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: Loza & Loza, LLP
- Agent Gabriel Fitch
- Main IPC: H01L43/06
- IPC: H01L43/06 ; G01R33/07 ; G01R33/09 ; H01L43/04 ; H01L43/14 ; G11C11/18 ; H01L43/08 ; H01L43/10 ; G11B5/012 ; H01F10/32 ; H01L27/22 ; G01R33/12 ; G11B5/37 ; G11B5/39 ; G11C11/16

Abstract:
Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.
Public/Granted literature
- US20180358543A1 MAGNETIC SENSOR USING SPIN HALL EFFECT Public/Granted day:2018-12-13
Information query
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