There is disclosed a resistance change memory device according to an aspect of the present disclosure. The resistance change memory device includes a first electrode layer and a second electrode layer that are disposed to be spaced apart from each other, and a resistance change material layer disposed between the first and second electrode layers and including an amorphous carbon structure. The resistance change material layer includes an impurity element adhering to the amorphous carbon structure, and the impurity element has a concentration gradient along a thickness direction of the resistance change material layer.