Invention Grant
- Patent Title: Surface acoustic wave RFID sensor for chemical detection and (bio)molecular diagnostics
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Application No.: US16326175Application Date: 2017-07-10
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Publication No.: US10720902B2Publication Date: 2020-07-21
- Inventor: Ayal Ram
- Applicant: EPITRONIC HOLDINGS PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: EPITRONIC HOLDINGS PTE. LTD
- Current Assignee: EPITRONIC HOLDINGS PTE. LTD
- Current Assignee Address: SG Singapore
- Agency: The Roy Gross Law Firm, LLC
- Agent Roy Gross
- International Application: PCT/IB2017/054141 WO 20170710
- International Announcement: WO2018/033809 WO 20180222
- Main IPC: H03H9/64
- IPC: H03H9/64 ; G01N29/02 ; G10K11/36 ; G01H11/08 ; H01L29/66 ; H01L29/778 ; H01L41/113 ; G01N29/00 ; H03H9/02 ; G01N29/24

Abstract:
The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as GaN/AlGaN. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.
Public/Granted literature
- US20190187105A1 SURFACE ACOUSTIC WAVE RFID SENSOR FOR CHEMICAL DETECTION AND (BIO MOLECULARDIAGNOSTICS Public/Granted day:2019-06-20
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