Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16516632Application Date: 2019-07-19
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Publication No.: US10720922B1Publication Date: 2020-07-21
- Inventor: Junichi Chisaka
- Applicant: KABUSHIKI KAISHA TOSHIBA , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b50d153
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
According to one embodiment, a semiconductor device includes: a boost circuit configured to apply a first voltage to a gate terminal; a first switching element, a first resistor, and a second resistor that are coupled in parallel between the gate terminal and a source terminal; a second switching element coupled in series with the second resistor between the gate terminal and the source terminal; a switching element control circuit configured to switch, in response to a change of a voltage from the first voltage applied from the boost circuit to the gate terminal to being indeterminate, the first switching element to on state after switching the second switching element to on state. A resistance value of the second resistor is smaller than a resistance value of the first resistor.
Public/Granted literature
- US20200244260A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
Information query
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