- Patent Title: Nonvolatile memory device and read and copy-back methods thereof
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Application No.: US15446665Application Date: 2017-03-01
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Publication No.: US10720945B2Publication Date: 2020-07-21
- Inventor: Makoto Hirano , Woojung Sun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@9a024e1
- Main IPC: G11C29/42
- IPC: G11C29/42 ; H03M13/00 ; H03M13/15 ; G06F11/10

Abstract:
A read method of a nonvolatile memory device is provided. The method includes storing data sensed from selected memory cells of the nonvolatile memory device into a page buffer, performing an error decoding operation by performing error detection on the sensed data to detect and error, correcting the detected error if the error is detected, and overwriting the page buffer with the corrected data, and de-randomizing data stored in the page buffer by using a seed after the error decoding operation has completed.
Public/Granted literature
- US20170329667A1 NONVOLATILE MEMORY DEVICE AND READ AND COPY-BACK METHODS THEREOF Public/Granted day:2017-11-16
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