Invention Grant
- Patent Title: Noise improvement in DNA sequencing circuit by FinFET-like nanopore formation
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Application No.: US15438734Application Date: 2017-02-21
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Publication No.: US10724065B2Publication Date: 2020-07-28
- Inventor: Yong Ju Lee , Joung Won Park
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C./QUALCOMM
- Main IPC: H01L29/417
- IPC: H01L29/417 ; C12Q1/00 ; C12Q1/6874 ; G01N27/414 ; G01N33/487 ; C12Q1/6869

Abstract:
The disclosure generally relates to a deoxyribonucleic acid (DNA) sequencing circuit having a controllable pore size and a lower membrane capacitance and noise floor relative to biological nanopore devices. For example, design principles used to fabricate a fin-shaped field effect transistor (FinFET) may be applied to form, on a first wafer, a nanopore that has a desired pore size in a silicon-based membrane. Electrodes and an interconnect embedded with an amplifier and analog-to-digital converter (ADC) may be formed on a separate second wafer, wherein the first wafer and the second wafer may then be bonded and further processed to form a sensing device that includes appropriate wells and pores to be used in a DNA sequencing circuit.
Public/Granted literature
- US20180238824A1 NOISE IMPROVEMENT IN DNA SEQUENCING CIRCUIT BY FINFET-LIKE NANOPORE FORMATION Public/Granted day:2018-08-23
Information query
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