Invention Grant
- Patent Title: Thermal chemical vapor deposition system and operating method thereof
-
Application No.: US16051265Application Date: 2018-07-31
-
Publication No.: US10724140B2Publication Date: 2020-07-28
- Inventor: Yen-Chan Lo , Yi-Fang Lai , Po-Hsiung Leu , Ding-I Liu , Si-Wen Liao , Kai-Shiung Hsu , Jheng-Uei Hsieh , Shian-Huei Lin , Jui-Fu Hsu , Cheng-Tsung Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C23C16/458

Abstract:
A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
Public/Granted literature
- US20180334747A1 Thermal Chemical Vapor Deposition System and Operating Method Thereof Public/Granted day:2018-11-22
Information query
IPC分类: