Invention Grant
- Patent Title: Silicon ingot and method of manufacturing a silicon ingot
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Application No.: US14160124Application Date: 2014-01-21
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Publication No.: US10724148B2Publication Date: 2020-07-28
- Inventor: Nico Caspary , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: C30B15/04
- IPC: C30B15/04 ; C30B29/06 ; C30B15/20
Abstract:
A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period.
Public/Granted literature
- US20150203988A1 Silicon Ingot and Method of Manufacturing a Silicon Ingot Public/Granted day:2015-07-23
Information query
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