Invention Grant
- Patent Title: Template substrate, method of manufacturing template substrate, and method of manufacturing semiconductor device
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Application No.: US15910314Application Date: 2018-03-02
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Publication No.: US10725374B2Publication Date: 2020-07-28
- Inventor: Anupam Mitra
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d1e8c20
- Main IPC: G03F7/00
- IPC: G03F7/00 ; H01L21/027 ; B29C59/00 ; G03F1/60 ; B29C59/02 ; B29L31/34 ; B29C33/38 ; H01L21/3105
Abstract:
A template substrate includes a pedestal portion on a first surface of a substrate. The template substrate defines an opening region provided in a second surface opposite to the first surface of the substrate. The opening region includes an opening end on a second surface side of the opening region corresponding to the second surface and a bottom surface on a first surface side of the opening region corresponding to the first surface. An area of the opening end is different from an area of the bottom surface.
Public/Granted literature
Information query
