- Patent Title: Variable modulation scheme for memory device access or operation
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Application No.: US15977808Application Date: 2018-05-11
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Publication No.: US10725913B2Publication Date: 2020-07-28
- Inventor: Robert Nasry Hasbun , Timothy M. Hollis , Jeffrey P. Wright , Dean D. Gans
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F12/0806 ; H04L5/00 ; H04L27/14

Abstract:
Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.
Public/Granted literature
- US20190102298A1 VARIABLE MODULATION SCHEME FOR MEMORY DEVICE ACCESS OR OPERATION Public/Granted day:2019-04-04
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