Invention Grant
- Patent Title: Semiconductor Fab's defect operating system and method thereof
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Application No.: US16514547Application Date: 2019-07-17
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Publication No.: US10726192B2Publication Date: 2020-07-28
- Inventor: Iyun Leu , Ray Jenn Tsay
- Applicant: ELITE SEMICONDUCTOR INC.
- Applicant Address: TW Hsinchu County
- Assignee: ELITE SEMICONDUCTOR INC.
- Current Assignee: ELITE SEMICONDUCTOR INC.
- Current Assignee Address: TW Hsinchu County
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7246e75e
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F30/398

Abstract:
The present invention relates to “an Innovative Semiconductor Fab's Defect Operating System” thereof for design house and manufacturing Fab is provided. The Innovative Semiconductor Fab's Defect Operating System comprises: receiving pluralities of defect data, IC design layout data; analyzing the defect data, design layouts, by a Critical Area Analysis (CAA) method via a Defect Operating System located inside the Fab site; identify a killer or non-killer defect based on the open or short failure probability; sending the killer defect data to the design house via internet, FTP, etc. The design house receives the wafer testing yield data; pick the bad die information and the killer defect information for failure analysis; correlate the corresponding defect data with the wafer test data; sending the failure killer defect data to the Fab via internet, FTP, etc.; and improve the wafer yield through feed forward defect data and feedback of failure killer defect data which is an innovative “Defect Operation Platform” implementation between design house and Fab.
Public/Granted literature
- US20200026819A1 SEMICONDUCTOR FAB'S DEFECT OPERATING SYSTEM AND METHOD THEREOF Public/Granted day:2020-01-23
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