Invention Grant
- Patent Title: Low-power data transfer from buffer to flash memory
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Application No.: US15836067Application Date: 2017-12-08
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Publication No.: US10726879B2Publication Date: 2020-07-28
- Inventor: Amit Berman , Junjin Kong , Uri Beitler
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/24 ; G11C11/00 ; G06F3/06 ; G11C7/04 ; G11C11/56 ; G11C16/10 ; G11C16/30 ; G11C11/4093

Abstract:
A solid-state drive (SSD) may include a volatile buffer such as DRAM, a non-volatile memory (NVM) such as NAND Flash connected to the volatile buffer, and a capacitor connected to both, where the capacitor may have an energy capacity insufficient to supply the buffer and NVM using a normal supply voltage in a normal mode, but sufficient to supply the buffer and NVM using at least one reduced supply voltage in a temporary mode; and a related method may include programming data to the NVM by temporarily reducing the supply voltage to the NVM, and writing data to the NVM using the reduced supply voltage.
Public/Granted literature
- US20190180793A1 LOW-POWER DATA TRANSFER FROM BUFFER TO FLASH MEMORY Public/Granted day:2019-06-13
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