Invention Grant
- Patent Title: Memory device and operating method of the memory device
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Application No.: US16288514Application Date: 2019-02-28
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Publication No.: US10726887B2Publication Date: 2020-07-28
- Inventor: Jong Wook Kim , Tae Un Youn
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32f9ad73
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C7/14 ; G06F12/02 ; G11C16/10
Abstract:
A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory blocks. The peripheral circuit performs a dummy operation on a dummy area among the plurality of memory blocks of the memory cell array.
Public/Granted literature
- US20200043533A1 MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE Public/Granted day:2020-02-06
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