Invention Grant
- Patent Title: Method to increase the lithographic process window of extreme ultra violet negative tone development resists
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Application No.: US15429871Application Date: 2017-02-10
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Publication No.: US10727055B2Publication Date: 2020-07-28
- Inventor: Nelson M. Felix , Martin Glodde , Dario L. Goldfarb
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L29/04 ; H01L21/308 ; H01L21/306 ; H01L21/321 ; H01L21/3213 ; G03F7/039 ; G03F7/16 ; G03F7/32
Abstract:
A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).
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