Invention Grant
- Patent Title: Slurry and manufacturing semiconductor using the slurry
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Application No.: US16170539Application Date: 2018-10-25
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Publication No.: US10727076B2Publication Date: 2020-07-28
- Inventor: Chun-Hung Liao , Chung-Wei Hsu , Tsung-Ling Tsai , Chen-Hao Wu , Chu-An Lee , Shen-Nan Lee , Teng-Chun Tsai , Huang-Lin Chao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G09G1/02
- IPC: G09G1/02 ; C09K3/14 ; C23F1/12 ; H01L21/02 ; H01L21/306 ; H01L21/3063 ; H01L21/3105 ; H01L21/311 ; C09G1/02
Abstract:
The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.
Public/Granted literature
- US20200135486A1 SLURRY AND MANUFACTURING SEMICONDUCTOR USING THE SLURRY Public/Granted day:2020-04-30
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