Invention Grant
- Patent Title: Method for manufacturing semiconductor structure
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Application No.: US16130690Application Date: 2018-09-13
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Publication No.: US10727117B2Publication Date: 2020-07-28
- Inventor: Yu-Hsiang Liao , Ya-Huei Li , Li-Wei Chu , Chun-Wen Nieh , Hung-Yi Huang , Chih-Wei Chang , Ching-Hwanq Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L29/40 ; H01L29/78 ; H01L29/66
Abstract:
A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.
Public/Granted literature
- US20190157141A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-05-23
Information query
IPC分类:
