Invention Grant
- Patent Title: Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device
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Application No.: US15964430Application Date: 2018-04-27
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Publication No.: US10727118B2Publication Date: 2020-07-28
- Inventor: Jung-Tang Wu , Pao-Sheng Chen , Pei-Hsuan Lee , Szu-Hua Wu , Chih-Chien Chi
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/67 ; H01L21/02
Abstract:
In a method for manufacturing a semiconductor device, a substrate is provided. Various first metal layers are formed on the substrate. A dielectric structure with through holes is formed over the first metal layers. The through holes expose the first metal layers. A pre-clean operation is performed on the dielectric structure and the first metal layers by using an alcohol base vapor and/or an aldehyde base vapor as a reduction agent. Conductors are formed on the first metal layers. In forming the conductors, the through holes are filled with the conductors.
Public/Granted literature
- US20190164826A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PRE-CLEAN APPARATUS FOR SEMICONDUCTOR DEVICE Public/Granted day:2019-05-30
Information query
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