Invention Grant
- Patent Title: Preheat processes for millisecond anneal system
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Application No.: US15377121Application Date: 2016-12-13
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Publication No.: US10727140B2Publication Date: 2020-07-28
- Inventor: Markus Lieberer , Christian Pfahler , Markus Hagedorn , Michael vanAbbema , Alexandr Cosceev
- Applicant: Mattson Technology, Inc. , Beijing E-Town Semiconductor Technology Co., Ltd.
- Applicant Address: US CA Fremont CN Beijing
- Assignee: MATTSON TECHNOLOGY, INC.,BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee: MATTSON TECHNOLOGY, INC.,BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee Address: US CA Fremont CN Beijing
- Agency: Dority & Manning, P.A.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/67 ; H01L21/324 ; H01L21/687

Abstract:
Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
Public/Granted literature
- US20170194220A1 Preheat Processes for Millisecond Anneal System Public/Granted day:2017-07-06
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