Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16166625Application Date: 2018-10-22
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Publication No.: US10727147B2Publication Date: 2020-07-28
- Inventor: Shu-Shen Yeh , Po-Yao Lin , Shyue-Ter Leu , Shin-Puu Jeng , Chih-Kung Huang , Tsung-Ming Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/31 ; H01L23/04 ; H01L23/367 ; H01L21/56 ; H01L21/48 ; H01L23/00 ; H01L25/18
Abstract:
A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.
Public/Granted literature
- US20190057916A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-02-21
Information query
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