Invention Grant
- Patent Title: Semiconductor device and amplifier circuit
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Application No.: US15985233Application Date: 2018-05-21
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Publication No.: US10727179B2Publication Date: 2020-07-28
- Inventor: Keiichiro Tanaka
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4d376d30
- Main IPC: H03F3/14
- IPC: H03F3/14 ; H01L23/522 ; H03F1/56 ; H01L49/02 ; H03F3/45

Abstract:
In order to easily sort failures due to short circuit between wires in an inductor, a semiconductor device includes a plurality of inductors (first inductor, second inductor) formed in a plurality of wiring layers. In each of the wiring layers, the metal layer of the first inductor and the metal layer of the second inductor respectively extend around the peripheral region from the inner periphery to the outer periphery in the same direction. The metal layer of the first inductor and the metal layer of the second inductor are arranged so as to be adjacent to each other.
Public/Granted literature
- US20180374794A1 SEMICONDUCTOR DEVICE AND AMPLIFIER CIRCUIT Public/Granted day:2018-12-27
Information query
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