Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US16315050Application Date: 2017-07-06
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Publication No.: US10727186B2Publication Date: 2020-07-28
- Inventor: Shinnosuke Soda , Yoshinori Yokoyama , Hiroshi Kobayashi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@231a3922
- International Application: PCT/JP2017/024840 WO 20170706
- International Announcement: WO2018/025571 WO 20180208
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/50 ; H01L23/373 ; H01L21/52 ; H01L25/07 ; H01L23/48 ; H01L25/18
Abstract:
A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.
Public/Granted literature
- US20190279943A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2019-09-12
Information query
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