Invention Grant
- Patent Title: Method of manufacturing semiconductor device that uses bonding layer to join semiconductor substrates together
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Application No.: US16025331Application Date: 2018-07-02
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Publication No.: US10727217B2Publication Date: 2020-07-28
- Inventor: Ming-Fa Chen , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L21/48 ; H01L23/00 ; H01L21/768 ; H01L23/538 ; H01L23/522 ; H01L25/07 ; H01L23/31 ; H01L21/60
Abstract:
Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.
Public/Granted literature
- US20190103390A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-04-04
Information query
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